SMXBC857B PNP Epitaxial Silicon Transistor same as Diode Inc. BC857B manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor


semiconix semiconductor - where the future is today - gold chip technology SMXBC857B
GOLD CHIP TECHNOLOGY™ PNP Epitaxial Silicon Transistor

FEATURES APPLICATIONS Bipolar Silicon Transistors - BARE DIE
High reliability bare die
Gold metallization
RoHS compliant, Lead Free
Compatible with chip and wire assemblies
Available as lateral or vertical PNP tansistor
Chip on Board
System in package SIP
Hybrid Circuits
Automotive, Biotechnology, Computers, Military, Medical, MEMS, Optoelectronics, Space, Telecommunications
Smart Cards, RFID, PDA, Laptops, Mobile phones
SMXBC857B BC857B PNP Epitaxial Silicon Transistor

Semiconix Semiconductor PNP low power transistors series are designed to be used in a wide variety of digital and analog functions, including amplification, switching, voltage regulation, signal modulation, and oscillators. Semiconix Semiconductor PNP low power transistors series are available as discrete devices or as part of a hybrid integrated circuit (complex devices) packaged in a very small area.
Semiconix Semiconductor transistors series may be used in many applications as hybrid Circuits, automotive, biotechnology, computers, military, medical, MEMS, optoelectronics, space, telecommunications, smart cards, RFID, PDA, laptops and mobile phones.
PNP low power transistors remain the devices that excels in some applications, such as discrete circuit design, due to the very wide selection of PNP low power transistors types available, and because of their high transconductance and output resistance compared to MOSFETs. The PNP low power transistor is also the choice for demanding analog circuits, especially for very-high-frequency applications, such as radio-frequency circuits for wireless systems. Because of the known temperature and current dependence of the forward-biased base-emitter junction voltage, the PNP can be used to measure temperature by subtracting two voltages at two different bias currents in a known ratio. Since base-emitter voltage varies as the log of the base-emitter and collector-emitter currents, PNP low power transistors can also be used to compute logarithms and anti-logarithms.
PNP low power transistors BD series are available in die form in two configurations, Vertical XXXX-BD or Lateral XXXXL-BD. In die form, these products are ideal for high reliability hybrid circuits and multi chip module applications.

COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.

Absolute Maximum Ratings * Ta = 25C unless otherwise noted
Name Symbol Value Unit
Collector-Base Voltage VCBO -50.00 V
Collector-Emitter Voltage VCEO -45.00 V
Emitter-Base Voltage VEBO -5.00 V
Collector Current IC -100.00 mA
Storage Temperature Range TSTG -65.00 C
Collector Power Dissipation PC 300.00 mW

Electrical Characteristics* TC = 25C unless otherwise noted
Name Symbol Test conditions Min. Typ. Max. Unit
Collector-Emitter Breakdown Voltage V(BR)CBO IC = -10mA, IE = 0 -50.00 V
Collector-Base Breakdown Voltage V(BR)CEO IC = -10mA, IB = 0 -45.00 V
Emitter-Base Breakdown Voltage BVEBO IE = -1mA, IC = 0 -5.00 V
Collector Cut-off Current ICES VCE = -50V -15.00 nA
DC Current Gain hFE1 VCE = -5.0V, IC = -2.0mA 220.00 290.00 475.00
Collector-Emitter Saturation Voltage VCE(sat)1 IC = -10mA, IB = -0.5mA B -75.00 -300.00 mV
Collector-Emitter Saturation Voltage VCE(sat)2 IC = -100mA, IBB = -5.0mA -250.00 -650.00 mV
Base-Emitter Saturation Voltage VBE (sat)1 IC = -10mA, IB = -0.5mA B -700.00 mV
Base-Emitter Saturation Voltage VBE (sat)2 IC = -100mA, IBB = -5.0mA -850.00 mV
Base-Emitter on Voltage VBE (on)1 VCE = -5.0V, IC = -2.0mA -600.00 -650.00 -750.00 mV
Base-Emitter on Voltage VBE (on)2 VCE = -5.0V, IC = -10mA -820.00 mV
Current Gain - Bandwidth Product fT VCE = -5.0V, IC = -10mA,f = 100MHz 100.00 200.00 MHz
Output Capacitance Ccb VCB = -10V, f = 1.0MHz 3.00 pF
Small-Signal Current Gain hfe1 VCE = -5.0V, IC = -2.0mA,f = 1.0kHz 300.00
Noise Figure NF1 VCE = -5.0V, IC = 200A,RS = 2k, f = 1kHz, f = 200Hz 2.00 10.00 dB
CROSS REFERENCE PARTS: Diode Inc. BC857B, ON Semiconductor BC857B

Substrate Thickness
Die size
Bonding pads Backside metallization
Silicon 8±1 ±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99% electroplated gold with TiW barrier. Custom metallization available upon request.
P/N MetalDie attach process
-BD0Au/SiAu/Si eutectic
-BD3Ti/Ni/AuSoft Solder SAC
-BD4Ti/Pt/AuSnAuSn eutectic

Click to select image: LATERAL VERTICAL
lateral SMXBC857B Diode Inc. BC857B PNP Epitaxial Silicon Transistor
lateral SMXBC857B Diode Inc. BC857B PNP Epitaxial Silicon Transistor
SMXBC857B Diode Inc. BC857B PNP Epitaxial Silicon Transistor

Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.


Lateral SMXBC857BL-BD -WP 10000 - -FF - -
Lateral SMXBC857BL-BD -WP 50000 - -FF - -
Vertical SMXBC857B-BD -WP 10000 -FF -
Vertical SMXBC857B-BD -WP 50000 -FF -

PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.

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DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.


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