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- Goldchip technology trademark of Semiconix Corporation for known good die , flip chip , bare die , wafer foundry for discrete semiconductors, , integrated circuits and integrated passive components manufactured by Semiconix Semiconductor,CROSS REFERENCE, HZM11NB3TR,HZM11NB3TR,HZM11NBZTL,HZM12ATL(31),HZM12NB1TL(121),HZM12NB2TL(122),HZM12NB2TR,HZM12NB3TL,HZM13N\13V,HZM13NB2/13V,HZM15N\15V,HZM15NB2TR,HZM15NB2TR,HZM15NB2TR,HZM15NB3TL,HZM15NBZTR(152),HZM16B2TL,HZM16NB1TL(161),HZM18B2TL,HZM18JTR,HZM18NB1TR,HZM18NB1TR/18V,HZM2.0NBTL,HZM2.0NBTL/2V,HZM2.2NB,HZM2.2NB-JTL,HZM2.2NBTR(2.2V),HZM2.4NBTR(2.4V),HZM2.7NB1TR,HZM2.7NB2,HZM2.7NB2TR,HZM2.7NB2TR,HZM2.7NB2TR \272,HZM2.7NB2TR(272),HZM201209T-102Y-H,HZM20N\20V,HZM20NB1J,HZM20NB1J,HZM20NB1TR,HZM20NB2TL,HZM22NB2TL(222),HZM24N(B2),HZM24NB2TL-E,HZM27F(27V),HZM27F(27V),HZM27FA(27V),HZM27FA(27V),HZM27FAT2,HZM27FATL,HZM27FATL,HZM27FATL,HZM27FATL,HZM27FATL,HZM27FATL,HZM27FATL,HZM27FATL,HZM27FATL SOT153-27V-27A,HZM27FATL(27A),HZM27NB01TR,HZM27NB01TR,HZM27NB01TR(27),HZM27NBTR,HZM3.0NB1,HZM3.0NB1,HZM3.0NB1TL,HZM3.0NB1TL,HZM3.0NB1TL,HZM3.0NB2TL,HZM3.0NB2TL(302),HZM3.3N3.3V,HZM3.3NB1TL,HZM3.3NB2TL,HZM3.3NB2TL,HZM3.6NB2TL/3.6V,HZM3.9NB2T,HZM3.9NB2TL,HZM3.9NB2TR(3.9V),HZM30NBTL,HZM30NBTL,HZM30NBTR,HZM30NBTR(30),HZM30NBTR/30V,HZM33NBT1/33V,HZM33NBTL SOT23-33V,HZM4.3NB1TL,HZM4.3NB1TL,HZM4.3NB1TL/4V3,HZM4.3NBITL,HZM4.7NB1TR(471),HZM4.7NB2TL,HZM4.7NB2TL,HZM4.7NB3,HZM4.7NB3TL,HZM4.7NB3TL,HZM4BTR,HZM4BTR,HZM4CTR,HZM4CTR\15,HZM5.1NB1TL,HZM5.1NB2TL,HZM5.1NB2TL(512),HZM5.1NB3TL,HZM5.1NB3TR,HZM5.6NB(5.6V),HZM5.6NB(5.6V),HZM5.6NB\5.6V,HZM5.6NB2JTR,HZM5.6NB2TL,HZM5.6NB2TL,HZM5.6NB3TL,HZM5.6NB3TL(563),HZM5C,HZM5CTL,HZM5CTL,HZM6.2AFATR\6.2V,HZM6.2N,HZM6.2NB1TL,HZM6.2NB2TL,HZM6.2NB2TL,HZM6.2NB2TR,HZM6.2NBITL,HZM6.2XT1,HZM6.2XTL,HZM6.2ZMA(62Z),HZM6.2ZMWATL,HZM6.2ZWA,HZM6.2ZWA,HZM6.2ZWATL,HZM6.2ZWATR,HZM6.2ZWATR,HZM6.2ZWATR,HZM6.2ZWATR,HZM6.2ZWATR SOT23-6.2V-62Z,HZM6.2ZWATR(6.2V),HZM6.8FATL,HZM6.8FATL,HZM6.8FATL,HZM6.8FATL,HZM6.8FATL,HZM6.8FATL,HZM6.8FATL,HZM6.8FATL(6.8V),HZM6.8FATL(6.8V),HZM6.8FATR,HZM6.8FATR(T3),HZM6.8MAT1(6.8A),HZM6.8MFATL,HZM6.8MFATL,HZM6.8MFATL,HZM6.8MFATL,HZM6.8MFATL,HZM6.8MFATL,HZM6.8MFATL,HZM6.8MFATL-E,HZM6.8MFATL-E,HZM6.8MFATL-E 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\2A,HZU2CLLTRF,HZU2CLLTRF(2L),HZU2R7B2,HZU3.0B1TRF,HZU3.0B1TRF,HZU3.3B2TRF,HZU3.3B2TRF,HZU3.3B2TRF,HZU3.6B1TRF(3.6V),HZU3.6B2TRF,HZU3.6B2TRF,HZU3.9B(3.9V),HZU3.9B(3.9V),HZU3.9B1TRF,HZU3.9B2TRF,HZU3.9B2TRF,HZU30B,HZU30B-JTRF,HZU30BTRF,HZU30BTRF,HZU30BTRF,HZU30BTRF,HZU30BTRF,HZU30BTRF,HZU30BTRF 0805-30V,HZU30BTRF(131),HZU30BTRF(30V),HZU36B(36V),HZU36B(36V),HZU36BTRF,HZU3BLLTRF,HZU3BLLTRF,HZU3BLLTRF,HZU3BLLTRF,HZU3CLLTRF,HZU3CLLTRF,HZU3CLLTRF,HZU4.3B,HZU4.3B(4.3V),HZU4.3B(4.3V),HZU4.3B1TRF,HZU4.3B1TRF,HZU4.3B2TL,HZU4.3B2TR4.3V,HZU4.3B2TRF,HZU4.3-B2-TRF,HZU4.3B2TRF-E,HZU4.3BTTRF,HZU4.7B,HZU4.7B1TRF,HZU4.7B1TRF,HZU4.7B1TRF,HZU4.7B1TRF,HZU4.7B1TRF,HZU4.7B2TRF,HZU4.7B2TRF,HZU4.7B2TRF,HZU4.7B2TRF(4.7V),HZU4.7B3TRF,HZU4.7B3TRF,HZU4.7B3TRF4.7V,HZU4ALLTRF,HZU4BLLTR,HZU4BLLTRF,HZU4CLLTRF,HZU4CLLTRF,HZU4CLLTRF,HZU4CLLTRF,HZU5.1B,HZU5.1B,HZU5.1B2TRF,HZU5.1B2TRF,HZU5.1B2TRF-E,HZU5.1B3TRF,HZU5.1B3TRF,HZU5.1B3TRF,HZU5.1B3TRF,HZU5.1BTRF,HZU5.6B1TRF,HZU5.6B2TRF,HZU5.6B2TRF,HZU5.6B2TRF,HZU5.6B2TRF,HZU5.6B2TRF,HZU5.6B2TRF,HZU5.6B3TRF,HZU5.6BZTRF(5.6V),HZU5.6BZTRF(5.6V),HZU5.6G,HZU5.6G,HZU5.6GTRF,HZU5.6GTRF,HZU5.6GTRF,HZU5.6GTRF,HZU5BLL-JTLF(5B),HZU5BLL-JTRF 0805-5V-5B,HZU5BLLTRF,HZU5BLLTRF,HZU5CLLTRF,HZU5CLLTRF(5C),HZU6.2B1,HZU6.2B2TRF,HZU6.2B2TRF,HZU6.2B2URF(6.2),HZU6.2B3TRF,HZU6.8B2,HZU6.8B2TRF,HZU6.8B2TRF,HZU6.8B2TRF,HZU6.8B2TRF,HZU6.8B2TRF,HZU6.8B2TRF,HZU6.8B2TRF,HZU6.8B2TRF,HZU6.8B2TRF,HZU6.8G,HZU6.8G,HZU7.5B1TRF,HZU7.5B2TRF,HZU7.5B2TRF,HZU7.5B2TRF,HZU7.5B2TRF,HZU7.5B2TRF,HZU8.2B1TRF,HZU8.2B1TRF,HZU9.1B,HZU9.1B1TRF,HZU9.1B2TRF,HZU9.1B2TRF,HZU9.1B2TRF,HZU9.1B2TRF,HZU9.1B2TRF9.1V,HZU9.1BTRF(9.1),HZU9.1G,HZU9.1G,HZV11B1TRF(11),HZV3^9B1TRF,HZV3^9B1TRF,HZV4CLLTRF,HZV4CLLTRF,H2,H2,
CROSS REFERENCE, HZM11NB3TR,HZM11NB3TR,HZM11NBZTL,HZM12ATL(31),HZM12NB1TL(121),HZM12NB2TL(122),HZM12NB2TR,HZM12NB3TL,HZM13N\13V,HZM13NB2/13V,HZM15N\15V,HZM15NB2TR,HZM15NB2TR,HZM15NB2TR,HZM15NB3TL,HZM15NBZTR(152),HZM16B2TL,HZM16NB1TL(161),HZM18B2TL,HZM18JTR,HZM18NB1TR,HZM18NB1TR/18V,HZM2.0NBTL,HZM2.0NBTL/2V,HZM2.2NB,HZM2.2NB-JTL,HZM2.2NBTR(2.2V),HZM2.4NBTR(2.4V),HZM2.7NB1TR,HZM2.7NB2,HZM2.7NB2TR,HZM2.7NB2TR,HZM2.7NB2TR \272,HZM2.7NB2TR(272),HZM201209T-102Y-H,HZM20N\20V,HZM20NB1J,HZM20NB1J,HZM20NB1TR,HZM20NB2TL,HZM22NB2TL(222),HZM24N(B2),HZM24NB2TL-E,HZM27F(27V),HZM27F(27V),HZM27FA(27V),HZM27FA(27V),HZM27FAT2,HZM27FATL,HZM27FATL,HZM27FATL,HZM27FATL,HZM27FATL,HZM27FATL,HZM27FATL,HZM27FATL,HZM27FATL SOT153-27V-27A,HZM27FATL(27A),HZM27NB01TR,HZM27NB01TR,HZM27NB01TR(27),HZM27NBTR,HZM3.0NB1,HZM3.0NB1,HZM3.0NB1TL,HZM3.0NB1TL,HZM3.0NB1TL,HZM3.0NB2TL,HZM3.0NB2TL(302),HZM3.3N3.3V,HZM3.3NB1TL,HZM3.3NB2TL,HZM3.3NB2TL,HZM3.6NB2TL/3.6V,HZM3.9NB2T,HZM3.9NB2TL,HZM3.9NB2TR(3.9V),HZM30NBTL,HZM30NBTL,HZM30NBTR,HZM30NBTR(30),HZM30NBTR/30V,HZM33NBT1/33V,HZM33NBTL SOT23-33V,HZM4.3NB1TL,HZM4.3NB1TL,HZM4.3NB1TL/4V3,HZM4.3NBITL,HZM4.7NB1TR(471),HZM4.7NB2TL,HZM4.7NB2TL,HZM4.7NB3,HZM4.7NB3TL,HZM4.7NB3TL,HZM4BTR,HZM4BTR,HZM4CTR,HZM4CTR\15,HZM5.1NB1TL,HZM5.1NB2TL,HZM5.1NB2TL(512),HZM5.1NB3TL,HZM5.1NB3TR,HZM5.6NB(5.6V),HZM5.6NB(5.6V),HZM5.6NB\5.6V,HZM5.6NB2JTR,HZM5.6NB2TL,HZM5.6NB2TL,HZM5.6NB3TL,HZM5.6NB3TL(563),HZM5C,HZM5CTL,HZM5CTL,HZM6.2AFATR\6.2V,HZM6.2N,HZM6.2NB1TL,HZM6.2NB2TL,HZM6.2NB2TL,HZM6.2NB2TR,HZM6.2NBITL,HZM6.2XT1,HZM6.2XTL,HZM6.2ZMA(62Z),HZM6.2ZMWATL,HZM6.2ZWA,HZM6.2ZWA,HZM6.2ZWATL,HZM6.2ZWATR,HZM6.2ZWATR,HZM6.2ZWATR,HZM6.2ZWATR,HZM6.2ZWATR SOT23-6.2V-62Z,HZM6.2ZWATR(6.2V),HZM6.8FATL,HZM6.8FATL,HZM6.8FATL,HZM6.8FATL,HZM6.8FATL,HZM6.8FATL,HZM6.8FATL,HZM6.8FATL(6.8V),HZM6.8FATL(6.8V),HZM6.8FATR,HZM6.8FATR(T3),HZM6.8MAT1(6.8A),HZM6.8MFATL,HZM6.8MFATL,HZM6.8MFATL,HZM6.8MFATL,HZM6.8MFATL,HZM6.8MFATL,HZM6.8MFATL,HZM6.8MFATL-E,HZM6.8MFATL-E,HZM6.8MFATL-E 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Semiconix Semiconductor designs and manufactures analog devices built on semiconductor linear technology. Semiconix Semiconductor
Designs and manufactures standard and custom bipolar and MOS analog devices, semiconductors, analog integrated circuits, discrete
components for high performance systems such as cellular/wireless, video amplifiers, heart pacemakers and medical imaging
systems. Standard semiconductor components are designed and manufactured for space, medical, telecommunications and military
applications only. Company's technology road map is including SiGe epi devices for high speed RF bipolars and high speed fiber
optic and optoelectronic applications. Analog devices, ASIC analog design and manufacturing: Semiconix produces a series of
semi-custom bipolar analog devices in arrays that are customized by designing a specific metal interconnection mask. The arrays
contain a large number of undedicated active and passive components, i.e. transistors, diodes, resistors, capacitors, MOSFET
s, LDMOS, photodiodes, phototransistors, etc. Since wafers are stocked before the metal mask, the custom IC development phase
is shorter and far less expensive compared to conventional full custom ICs. Customers may provide own analog design. Optoelectronic
components: photodiodes, photodiodes arrays, phototransistors, position sensing devices, optocouplers, optoisolators, photodarlington,
high voltage phototransistors output, Schottky infrared detectors. Discrete semiconductors: Schottky diodes, Zenner diodes,
TVS, small signal bipolar transistors, high voltage bipolar transistors, matched pair bipolar transistors, small signal JFET
s and MOSFET s, MCT (MOS controlled tyristors), IGBT. Semiconix 's Divisions: HTE
Labs Provides Wafer Foundry, R&D support and Specialty Wafer Fab Processing (including thin film vacuum deposition
services) to customers from semiconductors and microelectronics industry. Wafer foundry includes the following processes:
20V, 45V, 75V, 25V super-beta and high voltage dielectric isolated bipolar process. R&D support is provided in the following
fields of microelectronics: thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb), sensor
technologies (inertial, pressure, temperature, gas and smoke detectors), optoelectronic technologies and components, discrete
and integrated circuits technology development for special applications, LiNbO3 applications like SAW, Ti diffused, light
wave guides and Mach-Zender light modulators. Specialty wafer fab processing: epitaxy, SiGe, epi, diffusion and oxidation,
ion implant, LPCVD and PECVD Si3N4, SiO2, platinum silicidation, photo-lithography, plasma etching, silicon micro-machining
by KOH anisotropic etch, sputter depositions of Ti/Ni/Ag lift off process, Ti/Pt/Au lift off process, sputter depositions
of thin film resistors : SiCr, NiCr, TaN2, silicon wafers back grind and polish followed by trimetal backside sputter depositions,
gold backside sputter depositions and alloy : gold electroplating and gold bump. SEMICONWELL
designs and manufacture standard and custom Integrated Passive Networks - IPN for the personal computer, telecommunications,
industrial controls, automotive, avionics. The Integrated Passive Networks are a sum of resistors, capacitors, inductors,
diodes and schottky diodes and are available in through hole and surface mounted packages. SEMICONWELL is supplying integrated
termination, filters and ESD protection for use in mobile phones, PDAs, personal computers, notebooks, routers, hubs, internet
appliances. Standard Devices - Most standard devices include resistors, capacitors, inductors, diodes and schottky diodes
networks and are inventoried by the designated part numbers and can be ordered on line, from factory or from distributors.
Custom Devices - Custom IPN (Integrated Passive Networks) are manufactured from customer's prints upon request. US
MICROWAVES develops, manufactures and supplies high
quality standard microwave thin film circuits and microwave
devices including RF bipolars for hybrid chip and wire applications as follows: microwave thin film circuits, custom manufacturing
from customer's data, spiral chip inductors - ceramic, sapphire and quartz substrate, thin film resistors - ceramic, silicon
and quartz substrates, multi-tap thin film resistors - ceramic and silicon substrates, capacitors MIS for chip and wire applications,
MNOS capacitors, MOS capacitors, ceramic capacitors, Schottky, PIN, tunnel, SRD, varactor and zero bias diodes, RF NPN and
PNP transistors, high speed LDMOS and T MOSFET s, MMIC - RF IC s silicon and SiGe.
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