SMX L48XX-ADJ 400mA LOW DROPOUT VOLTAGE REGULATORS same as ST Microelectronics L48XX-ADJ, manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. SMX L48XX-ADJ 400mA LOW DROPOUT VOLTAGE REGULATORS same as ST Microelectronics L48XX-ADJ, manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=L48XX-ADJ">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXL48XX-ADJ&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX L48XX-ADJ - BARE DIE GOLD CHIP TECHNOLOGY™ 400mA LOW DROPOUT VOLTAGE REGULATORS FEATURES APPLICATIONS LDO VOLTAGE REGULATOR 400mA output within 2% over temperature Very low quiescent current Low dropout voltage (420 mV Typ) Extremely tight load and line regulation Very low temperature coefficient Current and thermal limiting Unregulated DC input can withstand -20V reverse battery and +60V positive transients; Direct replacement for SGS-THOMSON, but USM48XX Series has lower ground current, higher accuracy of output voltage and extremely tight load line regulation 4-pins version (fixed model) and 5-pins versions (adjust model) has shutdown input In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS L48XX-ADJ L48XX-ADJ 400mA LOW DROPOUT VOLTAGE REGULATORS SMXL48XX-ADJ 400mA LOW DROPOUT VOLTAGE REGULATORS - PRODUCT DESCRIPTION The SMX L48XX-ADJ series of fixed-voltage monolithic micropower voltage regulators is designed for a wide range of applications. This device excellent choise for use in battery-powered application. Furthermore, the quiescent current increases only slightly at dropout, which prolongs battery life. This series of fixed-voltage regulators features very low quiescent current (100mA Typ.) and very low drop output voltage (Typ. 60mV al light load and 420mV at 400mA). This includes a tight initial tolerance of 0.5% typ., extremely good load and line regulation of 0.05% typ., and very low output temperature coefficient. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM L48XX-ADJ ST Microelectronics L48XX-ADJ 400mA LOW DROPOUT VOLTAGE REGULATORS L48XX-ADJ MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Lead Temperature (Soldering, 5 sec) Tlead 300 °C Storage Temperature Range Tstg -65 to +150 °C Operating Junction Temperature Range Top -55 to +150 °C Input Supply Voltage Vin -20 to +35 V Continuous total dissipation at 25°C free-air temperature Pd 12 W ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. L48XX-ADJ ELECTRICAL CHARACTERISTIC VI=14.4V;CO=100F;Tj=25°C unless otherwise specified. PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Output Voltage -25°C ≤TJ ≤85°C Full Operating temperature 1mA≤IL≤400mA, TJ≤TJMAX 0.985|VO| 0.98|VO| 0.975|VO| VO VO 1.015|VO| 1.02|VO| 1.025|VO| V Input Supply Voltage 26 Output Voltage Temperature Coefficient (Note 1) 50 150 ppm/°C Line Regulation (Note 2) 13V≤Vin≤26V (Note 3) 0.1 0.4 % Load Regulation (Note 2) 1mA≤IL≤400mA 0.1 0.3 % Dropout Voltage (Note 4) IL = 150mA IL = 400mA 200 420 400 700 mV Ground Current (Note 5) IL = 100mA IL = 150mA IL = 400mA 100 12 30 200 20 50 µA mA Dropout Ground Current (Note 5) Vin = Vout - 0.5V, IL = 150mA 110 120 µA Current Limit Vout = 0 350 500 mA Thermal Regulation (Note 6) 0.05 0.2 %/W Output Noise, 10Hz to 100KHz IL = 100mA CL = 2.2µF CL = 3.3µF CL = 33µF 500 350 120 µVRMS Ripple Rejection Ratio IO = 350mA, f = 120Hz, CO = 100µF, Vin = VO + 3V + 2Vpp 60 dB Adjust model Reference Voltage Over Temperature (Note 7) 1.21 1.185 1.235 1.26 1.285 V Feedback Pin Bias Current 20 40 nA Reference Voltage Temperature Coefficient (Note 1) 50 ppm/°C Feedback Pin Bias Current Temperature Coefficient 0.1 nA/°C Shutdown Input Input Logic Voltage Low (Regulator ON) High (Regulator OFF) 2 1.3 0.7 V Shutdown Pin Input Current Vs = 2.4V Vs = 26V 30 450 50 600 µA Regulator Output Current in Shutdown (Note 8) 5.0V≤Vout<15.0V 3.3V≤Vout<5.0V 2.0V≤Vout<3.3V 10 20 30 µA (NOTE 1) Output or reference voltage temperature coefficients defined as the worst case voltage change divided by the total temperature range. (NOTE 2) Regulations is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output voltage due to heating effects are covered under the specification for the thermal regulation. (NOTE 3) Line regulation is tested at 150°C for IL = 5mA. For IL = 100mA and TJ = 125°C. line regulation is guaranteed by design to 0.2%. For USM4815 16≤VIN≤26V. (NOTE 4) Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at 1V differential. (NOTE 5) Ground pin current is the regulator quiescent. The total current drawn from the sources is the sum of the ground pin current and output load current. (NOTE 6) Thermal regulation is the change in output voltage at a time T after a change in power dissipation, excluding load or line regulation effects. Specifications are for a 200mA load pulse (3W pulse) for T = 10ms. (NOTE 7) Vref≤Vout≤(Vin - 1V), 2.3V≤Vin≤26V, 100m≤IL≤400mA, TJ≤TJMAX. (NOTE 8) Vshutdown≥2V, Vin≥26V, Vout = 0V. SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10 101.18 x 61.81 ±1 [2.57 x 1.57] min 7x7 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. L48XX-ADJ DIE LAYOUT - MECHANICAL SPECIFICATIONS L48XX-ADJ DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mils) X(mm) Y(mils) 1 INPUT 10.827 0.275 50.394 2 OUTPUT 10.827 0.275 3.543 3 FEEDBACK (adjust model) 42.52 1.08 3.543 4 GND 69.488 1.765 3.543 5 SHUTDOWN 90.354 2.295 3.543 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. L48XX-ADJ STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USM L48XX-ADJ 100pc -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXL48XX-ADJ&idx=5">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission. Valid XHTML 1.0 Transitional by http://validator.w3.org

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semiconix semiconductor - where the future is today - gold chip technology SMX L48XX-ADJ - BARE DIE
GOLD CHIP TECHNOLOGY™ 400mA LOW DROPOUT VOLTAGE REGULATORS

FEATURES APPLICATIONS LDO VOLTAGE REGULATOR
400mA output within 2% over temperature
Very low quiescent current
Low dropout voltage (420 mV Typ)
Extremely tight load and line regulation
Very low temperature coefficient
Current and thermal limiting
Unregulated DC input can withstand -20V reverse battery and +60V positive transients;
Direct replacement for SGS-THOMSON, but USM48XX Series has lower ground current, higher accuracy of output voltage and extremely tight load line regulation
4-pins version (fixed model) and 5-pins versions (adjust model) has shutdown input
In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS









L48XX-ADJ L48XX-ADJ 400mA LOW DROPOUT VOLTAGE REGULATORS

SMXL48XX-ADJ 400mA LOW DROPOUT VOLTAGE REGULATORS - PRODUCT DESCRIPTION
The SMX L48XX-ADJ series of fixed-voltage monolithic micropower voltage regulators is designed for a wide range of applications. This device excellent choise for use in battery-powered application. Furthermore, the quiescent current increases only slightly at dropout, which prolongs battery life. This series of fixed-voltage regulators features very low quiescent current (100mA Typ.) and very low drop output voltage (Typ. 60mV al light load and 420mV at 400mA). This includes a tight initial tolerance of 0.5% typ., extremely good load and line regulation of 0.05% typ., and very low output temperature coefficient.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS
Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.


SCHEMATIC DIAGRAM
L48XX-ADJ ST Microelectronics L48XX-ADJ 400mA LOW DROPOUT VOLTAGE REGULATORS

L48XX-ADJ MAXIMUM RATINGS
PARAMETERSYMBOLVALUEUNITS
Lead Temperature (Soldering, 5 sec)Tlead300°C
Storage Temperature RangeTstg-65 to +150°C
Operating Junction Temperature RangeTop-55 to +150°C
Input Supply VoltageVin-20 to +35V
Continuous total dissipation at 25°C free-air temperaturePd12W
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

L48XX-ADJ ELECTRICAL CHARACTERISTIC
VI=14.4V;CO=100F;Tj=25°C unless otherwise specified.
PARAMETERTEST CONDITIONSSYMBOLMINTYPMAXUNITS
Output Voltage-25°C ≤TJ ≤85°C Full Operating temperature 1mA≤IL≤400mA, TJ≤TJMAX0.985|VO| 0.98|VO| 0.975|VO|VO VO1.015|VO| 1.02|VO| 1.025|VO|V
Input Supply Voltage26
Output Voltage Temperature Coefficient(Note 1)50150ppm/°C
Line Regulation (Note 2)13V≤Vin≤26V (Note 3)0.10.4%
Load Regulation (Note 2)1mA≤IL≤400mA0.10.3%
Dropout Voltage (Note 4)IL = 150mA IL = 400mA200 420400 700mV
Ground Current (Note 5)IL = 100mA IL = 150mA IL = 400mA100 12 30200 20 50µA mA
Dropout Ground Current (Note 5)Vin = Vout - 0.5V, IL = 150mA110120µA
Current LimitVout = 0350500mA
Thermal Regulation (Note 6)0.050.2%/W
Output Noise, 10Hz to 100KHz IL = 100mACL = 2.2µF CL = 3.3µF CL = 33µF500 350 120µVRMS
Ripple Rejection RatioIO = 350mA, f = 120Hz, CO = 100µF, Vin = VO + 3V + 2Vpp60dB
Adjust model
Reference VoltageOver Temperature (Note 7)1.21 1.1851.2351.26 1.285V
Feedback Pin Bias Current2040nA
Reference Voltage Temperature Coefficient(Note 1)50ppm/°C
Feedback Pin Bias Current Temperature Coefficient0.1nA/°C
Shutdown Input
Input Logic VoltageLow (Regulator ON) High (Regulator OFF) 21.30.7V
Shutdown Pin Input CurrentVs = 2.4V Vs = 26V30 45050 600µA
Regulator Output Current in Shutdown (Note 8)5.0V≤Vout<15.0V 3.3V≤Vout<5.0V 2.0V≤Vout<3.3V10 20 30µA
(NOTE 1) Output or reference voltage temperature coefficients defined as the worst case voltage change divided by the total temperature range.
(NOTE 2) Regulations is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output voltage due to heating effects are covered under the specification for the thermal regulation.
(NOTE 3) Line regulation is tested at 150°C for IL = 5mA. For IL = 100mA and TJ = 125°C. line regulation is guaranteed by design to 0.2%. For USM4815 16≤VIN≤26V.
(NOTE 4) Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at 1V differential.
(NOTE 5) Ground pin current is the regulator quiescent. The total current drawn from the sources is the sum of the ground pin current and output load current.
(NOTE 6) Thermal regulation is the change in output voltage at a time T after a change in power dissipation, excluding load or line regulation effects. Specifications are for a 200mA load pulse (3W pulse) for T = 10ms.
(NOTE 7) Vref≤Vout≤(Vin - 1V), 2.3V≤Vin≤26V, 100m≤IL≤400mA, TJ≤TJMAX.
(NOTE 8) Vshutdown≥2V, Vin≥26V, Vout = 0V.

SPICE MODEL
Spice model pending.
 
CROSS REFERENCE PARTS

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
mils [mm]
Bonding pads Backside metallization
Silicon 10 101.18 x 61.81 ±1
[2.57 x 1.57]
min 7x7 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

L48XX-ADJ DIE LAYOUT - MECHANICAL SPECIFICATIONSL48XX-ADJ DIE LAYOUT - MECHANICAL SPECIFICATIONS
PAD #FUNCTIONX(mils)X(mm)Y(mils)
1INPUT10.8270.27550.394
2OUTPUT10.8270.2753.543
3FEEDBACK (adjust model)42.521.083.543
4GND69.4881.7653.543
5SHUTDOWN90.3542.2953.543

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

L48XX-ADJ STANDARD PRODUCTS PRICE LIST
USM PART #MINIMUM ORDER QUANTITYWaffle PacksU/P($)
USM L48XX-ADJ100pc-WP$3.20
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONIX SEMICONDUCTOR technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.

INSTANT QUOTE
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DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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