SMX LM7805A 5V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS same as Fairchild Semiconductor LM7805A, Fairchild Semiconductor LM7805A, Fairchild Semiconductor LM7805A manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Fairchild Semiconductor LM7805A SMX LM7805A 5V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS same as Fairchild Semiconductor LM7805A, Fairchild Semiconductor LM7805A, Fairchild Semiconductor LM7805A manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Fairchild Semiconductor LM7805A REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=LM7805A">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXLM7805A&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX LM7805A - BARE DIE GOLD CHIP TECHNOLOGY™ 5V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS FEATURES APPLICATIONS VOLTAGE REGULATOR Output Current in Excess of 1A Output Voltages of +5V Internal Thermal Overload Protection Short Circuit Protection Output Transistor Safe Operating area Compensation In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS LM7805A LM7805A 5V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS SMXLM7805A 5V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS - PRODUCT DESCRIPTION SMX LM7805A is a 3-terminal positive voltage regulator designed with built in internal current limiting, thermal shutdown and safe-area compensation for maximum flexibility and safety . With adequate heat sinking provided, SMX LM7805A can deliver up to 1.5A output current. SMX LM7805A can be used as fixed voltage regulator in a wide range of applications where local voltage regulation is preferred for elimination of noise and distribution problems associated with single-point regulation. SMX LM7805A can also be used (by adding external components) to obtain adjustable output voltages and currents. It is not necessary to bypass the output, although this does improve transient response. Input bypassing is needed only if the regulator is located far from the filter capacitor of the power supply. SMX LM7805A is available in die form only. The die size is 66.93x72.83mils. The die thickness is 16.5±1 mils. The bond pad metallization is standard 1µm Aluminum. The backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM LM7805A Fairchild Semiconductor LM7805A 5V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS LM7805A MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Internal Power Dissipation (Note1) Pd internally limited W Input Voltage Vin 35 V Maximum Junction Temperature Tj 150 °C Operating Junction Temperature Range Tj 0 to 150 °C Storage Temperature Range Tstg -65 to +150 °C ESD Susceptibility 2 ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. LM7805A ELECTRICAL CHARACTERISTIC –55°C<Tj<+150°C, Vi = 10V, Io = 500mA, Ci = 0.33µF, Co= 0.1µF, unless otherwise specified PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Output Voltage Tj=25°C VO 4.8 5 5.2 V Line Regulation Tj=25°C 7.0V<Vi<25V 8.0V<Vi<12V ΔVO 100 50 mV Load Regulation Tj = 25°C 5.0mA<IO<1.5A 250mA<IO<750mA ΔVO 100 50 mV Output Voltage 7.0V<Vi<20V, 5.0mA<Io<1.0A, 0°C<Tj<125°C Vo 4.75 5.25 V Quiescent Current Tj = 25°C Iq 8 mA Quiescent Current With Line With Load 7V<Vi<25V 5.0mA<Io<1.0A DIq 1.3 0.5 mA Noise Ta=25°C, 10Hz<f<100kHz Vn 40 µV Ripple Rejection f=120Hz, Io=350mA, Tj=25°C ΔV1/ΔVo 62 80 dB Dropout Voltage Io=1.0A, Tj=25°C Vdo 2.0 V Output Resistance f=1.0kHz Ro 8 mW Output Short Circuit Current Tj = 25°C, Vj = 35V Ios 2.1 A Average Temperature Coefficient of Output Voltage –55°C<Ta<+250°C, Io<5mA ΔVo/ΔT 0.6 -4 mV/°C (NOTE 1)Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects have to be added to those due to the Io. The device should be subject to low duty cycle pulses ONLY. (NOTE 2)All characteristics are measured with a 0.22µF capacitor from input to ground and a 0.1µF capacitor from output to ground. All characteristics except noise voltage and ripple rejection ratio are measured using pulse techniques (tw<10ms, duty cycle<5%). Output voltage changes due to changes in internal temperature must be taken into account separately. SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 16 66.93 x 72.83 ±1 [1.7 x 1.85] min 9.5x9.5 mils Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. LM7805A DIE LAYOUT - MECHANICAL SPECIFICATIONS LM7805A DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mm) Y(mm) 1 Input 710 775 2 GND -750 -825 3 Output -750 -825 Note: Origin is the center of the die. SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. LM7805A STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USM LM7805A $320/100pc. -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXLM7805A&idx=23">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission. Valid XHTML 1.0 Transitional by http://validator.w3.org

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semiconix semiconductor - where the future is today - gold chip technology SMX LM7805A - BARE DIE
GOLD CHIP TECHNOLOGY™ 5V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS

FEATURES APPLICATIONS VOLTAGE REGULATOR
Output Current in Excess of 1A
Output Voltages of +5V
Internal Thermal Overload Protection
Short Circuit Protection
Output Transistor Safe
Operating area Compensation



In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS









LM7805A LM7805A 5V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS

SMXLM7805A 5V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS - PRODUCT DESCRIPTION
SMX LM7805A is a 3-terminal positive voltage regulator designed with built in internal current limiting, thermal shutdown and safe-area compensation for maximum flexibility and safety . With adequate heat sinking provided, SMX LM7805A can deliver up to 1.5A output current. SMX LM7805A can be used as fixed voltage regulator in a wide range of applications where local voltage regulation is preferred for elimination of noise and distribution problems associated with single-point regulation. SMX LM7805A can also be used (by adding external components) to obtain adjustable output voltages and currents. It is not necessary to bypass the output, although this does improve transient response. Input bypassing is needed only if the regulator is located far from the filter capacitor of the power supply. SMX LM7805A is available in die form only. The die size is 66.93x72.83mils. The die thickness is 16.5±1 mils. The bond pad metallization is standard 1µm Aluminum. The backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS
Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.


SCHEMATIC DIAGRAM
LM7805A Fairchild Semiconductor LM7805A 5V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS

LM7805A MAXIMUM RATINGS
PARAMETERSYMBOLVALUEUNITS
Internal Power Dissipation (Note1)Pdinternally limitedW
Input Voltage Vin35V
Maximum Junction TemperatureTj150°C
Operating Junction Temperature RangeTj0 to 150°C
Storage Temperature RangeTstg-65 to +150°C
ESD Susceptibility 2 
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

LM7805A ELECTRICAL CHARACTERISTIC
–55°C<Tj<+150°C, Vi = 10V, Io = 500mA, Ci = 0.33µF, Co= 0.1µF, unless otherwise specified
PARAMETERTEST CONDITIONSSYMBOLMINTYPMAXUNITS
Output VoltageTj=25°CVO4.855.2V
Line RegulationTj=25°C 7.0V<Vi<25V 8.0V<Vi<12VΔVO100 50mV
Load RegulationTj = 25°C 5.0mA<IO<1.5A 250mA<IO<750mAΔVO100 50mV
Output Voltage7.0V<Vi<20V, 5.0mA<Io<1.0A, 0°C<Tj<125°CVo4.755.25V
Quiescent CurrentTj = 25°CIq8mA
Quiescent Current With Line With Load7V<Vi<25V 5.0mA<Io<1.0ADIq1.3 0.5mA
NoiseTa=25°C, 10Hz<f<100kHzVn40µV
Ripple Rejectionf=120Hz, Io=350mA, Tj=25°CΔV1/ΔVo6280dB
Dropout VoltageIo=1.0A, Tj=25°CVdo2.0V
Output Resistancef=1.0kHzRo8mW
Output Short Circuit CurrentTj = 25°C, Vj = 35VIos2.1A
Average Temperature Coefficient of Output Voltage–55°C<Ta<+250°C, Io<5mAΔVo/ΔT0.6-4mV/°C
(NOTE 1)Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects have to be added to those due to the Io. The device should be subject to low duty cycle pulses ONLY.
(NOTE 2)All characteristics are measured with a 0.22µF capacitor from input to ground and a 0.1µF capacitor from output to ground. All characteristics except noise voltage and ripple rejection ratio are measured using pulse techniques (tw<10ms, duty cycle<5%). Output voltage changes due to changes in internal temperature must be taken into account separately.

SPICE MODEL
Spice model pending.
 
CROSS REFERENCE PARTS
Fairchild Semiconductor LM7805A

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
mils [mm]
Bonding pads Backside metallization
Silicon 16 66.93 x 72.83 ±1
[1.7 x 1.85]
min 9.5x9.5 mils Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

LM7805A DIE LAYOUT - MECHANICAL SPECIFICATIONSLM7805A DIE LAYOUT - MECHANICAL SPECIFICATIONS
PAD #FUNCTIONX(mm)Y(mm)
1Input710775
2GND-750-825
3Output-750-825
Note: Origin is the center of the die.

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

LM7805A STANDARD PRODUCTS PRICE LIST
USM PART #MINIMUM ORDER QUANTITYWaffle PacksU/P($)
USM LM7805A$320/100pc.-WP$3.20
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONIX SEMICONDUCTOR technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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