SMX CS5205 3A Low Dropout Positive Voltage Regulator same as ON Semiconductor CS5205, Cherry Semiconductor CS5205-1, Cherry Semiconductor CS5205A-1, Cherry Semiconductor CS5205-3, Cherry Semiconductor CS5205A-1GDP3, Cherry Semiconductor CS5205-1GT3, Cherry Semiconductor CS5205-5, Cherry Semiconductor CS5205-1GDPR3, Cherry Semiconductor CS5205A-1GDPR3, Cherry Semiconductor CS5205-1GDP3, Cherry Semiconductor CS5205-3GDPR3, Cherry Semiconductor CS5205A-1GT3, Cherry Semiconductor CS5205-5GT3, ON Semiconductor CS5205-5, ON Semiconductor CS5205-5GT3, ON Semiconductor CS5205A-1, ON Semiconductor CS5205A-1-D, ON Semiconductor CS5205A-1GDP3, ON Semiconductor CS5205A-1GDPR3, ON Semiconductor CS5205-3GT3, ON Semiconductor CS5205-3GDPR3, ON Semiconductor CS5205-1, ON Semiconductor CS5205-1-D, ON Semiconductor CS5205-1GDP3, ON Semiconductor CS5205-1GDPR3, ON Semiconductor CS5205-1GT3, ON Semiconductor CS5205-2, ON Semiconductor CS5205-2-D, ON Semiconductor CS5205-2GDP3, ON Semiconductor CS5205-2GDPR3, ON Semiconductor CS5205-2GT3, ON Semiconductor CS5205-3, ON Semiconductor CS5205-3GDP3, ON Semiconductor CS5205A-1GT3 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Cherry Semiconductor CS5205-1, ON Semiconductor CS5205-1 SMX CS5205 3A Low Dropout Positive Voltage Regulator same as ON Semiconductor CS5205, Cherry Semiconductor CS5205-1, Cherry Semiconductor CS5205A-1, Cherry Semiconductor CS5205-3, Cherry Semiconductor CS5205A-1GDP3, Cherry Semiconductor CS5205-1GT3, Cherry Semiconductor CS5205-5, Cherry Semiconductor CS5205-1GDPR3, Cherry Semiconductor CS5205A-1GDPR3, Cherry Semiconductor CS5205-1GDP3, Cherry Semiconductor CS5205-3GDPR3, Cherry Semiconductor CS5205A-1GT3, Cherry Semiconductor CS5205-5GT3, ON Semiconductor CS5205-5, ON Semiconductor CS5205-5GT3, ON Semiconductor CS5205A-1, ON Semiconductor CS5205A-1-D, ON Semiconductor CS5205A-1GDP3, ON Semiconductor CS5205A-1GDPR3, ON Semiconductor CS5205-3GT3, ON Semiconductor CS5205-3GDPR3, ON Semiconductor CS5205-1, ON Semiconductor CS5205-1-D, ON Semiconductor CS5205-1GDP3, ON Semiconductor CS5205-1GDPR3, ON Semiconductor CS5205-1GT3, ON Semiconductor CS5205-2, ON Semiconductor CS5205-2-D, ON Semiconductor CS5205-2GDP3, ON Semiconductor CS5205-2GDPR3, ON Semiconductor CS5205-2GT3, ON Semiconductor CS5205-3, ON Semiconductor CS5205-3GDP3, ON Semiconductor CS5205A-1GT3 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Cherry Semiconductor CS5205-1, ON Semiconductor CS5205-1 REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=CS5205">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXCS5205&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX CS5205 - BARE DIE GOLD CHIP TECHNOLOGY™ 3A Low Dropout Positive Voltage Regulator FEATURES APPLICATIONS LDO VOLTAGE REGULATOR Ajustable or Fixed Output Output Current of 5A Low Dropout 700mV at 5A Output Current 0.04% Line Regulation 0.1% Load regulation 100% Trermal limit Burn-In Fast Transient Response Remote sense High Eficiency Linear Regulators Post Regulators for Swiching Supplies Adjustable power supply CS5205 CS5205 3A Low Dropout Positive Voltage Regulator SMXCS5205 3A Low Dropout Positive Voltage Regulator - PRODUCT DESCRIPTION The SMX CS5205 series of positive adjustable and fixed regulators are designed to provide 5A with higher efficiency than currently available devices. All internal circuitry is designed to operate down to 500mV input to output differential and the dropout voltage is fully specified as a function of load current. Dropout voltage of the device is 100mV at light loads and rising to 500mV at maximum output current. A second low current input is required to achieve this dropout. The USM5205 can also be used as a single supply device (3 pin version). On-chip trimming adjusts the reference voltage to 1%. Current limit is also trimmed, minimizing the stress on both the regulator and power source circuitry under overload conditions. The USM5205 series are ideal to power the next generation of advanced microprocessor on motherboards where both 5V and 3.3V supplies are available HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM CS5205 ON Semiconductor CS5205 3A Low Dropout Positive Voltage Regulator CS5205 MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Power Dissipation Pd Internally limited W Input Voltage Vpower Vcontrol Vin 7 13 V Operating Junction Temperature Range Control Section Power Transistor Tj 0 to 125 0 to150 °C Storage Temperature Range Tstg -65 to +150 °C Lead Temperature (Soldering, 10 sec.) Tlead 300 °C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. CS5205 ELECTRICAL CHARACTERISTIC (Note1) ILOAD=0mA and TJ=+250C unless otherwise specified. PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Reference Voltage VCONTROL=2.75V; VPOWER=2V; ILOAD=10mA VCONTROL=2.7V to 12V; VPOWER=3.3V to 5.5V ILOAD=10mA to 5A 1.238 1.230 1.250 1.250 1.262 1.270 V Output Voltage USM CS5205-1.5 VCONTROL=4V; VPOWER=2V VCONTROL=3V; VPOWER=2.3V ILOAD=0mA to 5A 1.485 1.475 1.500 1.500 1.515 1.525 V Output Voltage USM CS5205-2.5 VCONTROL=.5V; VPOWER=3.3V VCONTROL=4V; VPOWER=3.3V ILOAD=0mA to 5A 2.475 2.460 2.500 2.500 2.525 2.540 V Output Voltage USM CS5205-2.85 VCONTROL=5.35V; VPOWER=3.35V VCONTROL=4.4V; VPOWER=3.7V ILOAD=0mA to 5A 2.821 2.805 2.850 2.850 2.879 2.895 V Output Voltage USM CS5205-3.0 VCONTROL=5.5V; VPOWER=3.5V VCONTROL=4.5V; VPOWER=3.8V ILOAD=0mA to 5A 2.970 2.950 3.000 3.000 3.030 3.050 V Output Voltage USM CS5205-3.3 VCONTROL=5.8V; VPOWER=3.8V VCONTROL=4.8V; VPOWER=4.1V ILOAD=0mA to 5A 3.267 3.247 3.300 3.300 3.333 3.535 V Output Voltage USM CS5205-3.5 VCONTROL=6V; VPOWER=4V VCONTROL=5V; VPOWER=4.3V ILOAD=0mA to 5A 3.465 3.445 3.500 3.500 3.535 3.555 V Output Voltage USM CS5205-5.0 VCONTROL=7.5V; VPOWER=5.5V VCONTROL=6.5V; VPOWER=5.8V ILOAD=0mA to 5A 4.950 4.920 5.000 5.000 5.050 5.080 V Line Regulation ILOAD=10mA; (1.5V+VOUT)≤VCONTROL≤12V 0.8≤(VPOWER-VOUT)≤5.5V 0.04 0.2 % Line Regulation VCONTROL=VOUT+2.5V; VPOWER=VOUT+0.8V ILOAD=10mA to 5A 0.08 0.4 % Minimum Load Current (Note2) VCONTROL=5V; VPOWER=3.3V; VADJ=0V 1.7 5 mA Control Pin Current (Note3) VCONTROL=VOUT+1.5V; VPOWER=VOUT+0.8V ILOAD=10mA to 5A 20 mA Ground Pin Current VCONTROL=VOUT+2.5V; VPOWER=VOUT+0.8V ILOAD=0mA to 5A 5 10 mA Adjust Pin Current VCONTROL=2.75V; VPOWER=2.05V; ILOAD=10mA 50 120 µA Current Limit VIN-VOUT=3V 1000 1500 A Ripple Rejection VCONTROL=VPOWER=VOUT+2.5V; VRIPPLE=1V ILOAD=500mA 60 75 dB Thermal Regulation TA=25°C, 30 ms pulse 0.003 %/W Dropout Voltage (Note 4) Control Input (VCONTROL-VOUT) VPOWER=VOUT+0.8V; ILOAD=10mA ILOAD=5A 1.00 1.15 1.15 1.30 V Power Input VPOWER-VOUT VCONTROL=VOUT+2.5V; ILOAD=10mA VCONTROL=VOUT+2.5V; ILOAD=5A 0.10 0.55 0.17 0.70 V (NOTE 1) VOUT=VSENSE; VADJ=0 unless otherwise specified (NOTE 2) For the adjustable device the minimum load current is the minimum current required to mantain regulation. Normally the current in the resistor devider used to set the output voltage is selected to meet the minimum load current requirement. (NOTE 3) The control pin current is the driver current required for the output transistor. This current will track output current whit a ratio of about 1:100 (NOTE 4) The dropout voltage for the CS5205 is caused by either minimum control voltage or minimum power voltage. The specification represent the minimum input/output voltage required to mantain 1% regulation. SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10 122.05 x 71.65 ±1 [3.1 x 1.82] min 7x7 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. CS5205 DIE LAYOUT - MECHANICAL SPECIFICATIONS CS5205 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mm) 1 OUT 0.205 2 OUT 1.55 3 OUT 2.875 4 VPower 0.875 5 VPower 2.225 6 VControl 1.55 7 Sense 0.205 8 Adjust (adjustable output) GND (fixed output) 0.205 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. CS5205 STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USM CS5205 100pc -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXCS5205&idx=20">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission. Valid XHTML 1.0 Transitional by http://validator.w3.org

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semiconix semiconductor - where the future is today - gold chip technology SMX CS5205 - BARE DIE
GOLD CHIP TECHNOLOGY™ 3A Low Dropout Positive Voltage Regulator

FEATURES APPLICATIONS LDO VOLTAGE REGULATOR
Ajustable or Fixed Output
Output Current of 5A
Low Dropout 700mV at 5A Output Current
0.04% Line Regulation
0.1% Load regulation
100% Trermal limit Burn-In
Fast Transient Response
Remote sense

High Eficiency Linear Regulators
Post Regulators for Swiching Supplies
Adjustable power supply







CS5205 CS5205 3A Low Dropout Positive Voltage Regulator

SMXCS5205 3A Low Dropout Positive Voltage Regulator - PRODUCT DESCRIPTION
The SMX CS5205 series of positive adjustable and fixed regulators are designed to provide 5A with higher efficiency than currently available devices. All internal circuitry is designed to operate down to 500mV input to output differential and the dropout voltage is fully specified as a function of load current. Dropout voltage of the device is 100mV at light loads and rising to 500mV at maximum output current. A second low current input is required to achieve this dropout. The USM5205 can also be used as a single supply device (3 pin version). On-chip trimming adjusts the reference voltage to 1%. Current limit is also trimmed, minimizing the stress on both the regulator and power source circuitry under overload conditions. The USM5205 series are ideal to power the next generation of advanced microprocessor on motherboards where both 5V and 3.3V supplies are available

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS
Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.


SCHEMATIC DIAGRAM
CS5205 ON Semiconductor CS5205 3A Low Dropout Positive Voltage Regulator

CS5205 MAXIMUM RATINGS
PARAMETERSYMBOLVALUEUNITS
Power DissipationPdInternally limitedW
Input Voltage Vpower VcontrolVin 7 13V
Operating Junction Temperature Range Control Section Power TransistorTj 0 to 125 0 to150°C
Storage Temperature RangeTstg-65 to +150°C
Lead Temperature (Soldering, 10 sec.)Tlead300°C
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

CS5205 ELECTRICAL CHARACTERISTIC
(Note1) ILOAD=0mA and TJ=+250C unless otherwise specified.
PARAMETERTEST CONDITIONSSYMBOLMINTYPMAXUNITS
Reference VoltageVCONTROL=2.75V; VPOWER=2V; ILOAD=10mA VCONTROL=2.7V to 12V; VPOWER=3.3V to 5.5V ILOAD=10mA to 5A1.238 1.2301.250 1.2501.262 1.270 V
Output Voltage USM CS5205-1.5VCONTROL=4V; VPOWER=2V VCONTROL=3V; VPOWER=2.3V ILOAD=0mA to 5A1.485 1.4751.500 1.500 1.515 1.525V
Output Voltage USM CS5205-2.5VCONTROL=.5V; VPOWER=3.3V VCONTROL=4V; VPOWER=3.3V ILOAD=0mA to 5A2.475 2.460 2.500 2.500 2.525 2.540 V
Output Voltage USM CS5205-2.85VCONTROL=5.35V; VPOWER=3.35V VCONTROL=4.4V; VPOWER=3.7V ILOAD=0mA to 5A2.821 2.8052.850 2.8502.879 2.895 V
Output Voltage USM CS5205-3.0VCONTROL=5.5V; VPOWER=3.5V VCONTROL=4.5V; VPOWER=3.8V ILOAD=0mA to 5A2.970 2.950 3.000 3.000 3.030 3.050 V
Output Voltage USM CS5205-3.3VCONTROL=5.8V; VPOWER=3.8V VCONTROL=4.8V; VPOWER=4.1V ILOAD=0mA to 5A3.267 3.2473.300 3.300 3.333 3.535V
Output Voltage USM CS5205-3.5VCONTROL=6V; VPOWER=4V VCONTROL=5V; VPOWER=4.3V ILOAD=0mA to 5A3.465 3.4453.500 3.5003.535 3.555V
Output Voltage USM CS5205-5.0VCONTROL=7.5V; VPOWER=5.5V VCONTROL=6.5V; VPOWER=5.8V ILOAD=0mA to 5A4.950 4.9205.000 5.0005.050 5.080 V
Line RegulationILOAD=10mA; (1.5V+VOUT)≤VCONTROL≤12V 0.8≤(VPOWER-VOUT)≤5.5V0.040.2%
Line RegulationVCONTROL=VOUT+2.5V; VPOWER=VOUT+0.8V ILOAD=10mA to 5A0.08 0.4%
Minimum Load Current (Note2)VCONTROL=5V; VPOWER=3.3V; VADJ=0V1.75mA
Control Pin Current (Note3)VCONTROL=VOUT+1.5V; VPOWER=VOUT+0.8V ILOAD=10mA to 5A20 mA
Ground Pin CurrentVCONTROL=VOUT+2.5V; VPOWER=VOUT+0.8V ILOAD=0mA to 5A510 mA
Adjust Pin CurrentVCONTROL=2.75V; VPOWER=2.05V; ILOAD=10mA50120 µA
Current LimitVIN-VOUT=3V10001500A
Ripple RejectionVCONTROL=VPOWER=VOUT+2.5V; VRIPPLE=1V ILOAD=500mA6075 dB
Thermal RegulationTA=25°C, 30 ms pulse0.003%/W
Dropout Voltage(Note 4)
Control Input (VCONTROL-VOUT)VPOWER=VOUT+0.8V; ILOAD=10mA ILOAD=5A1.00 1.151.15 1.30V
Power Input VPOWER-VOUTVCONTROL=VOUT+2.5V; ILOAD=10mA VCONTROL=VOUT+2.5V; ILOAD=5A0.10 0.550.17 0.70V
(NOTE 1) VOUT=VSENSE; VADJ=0 unless otherwise specified
(NOTE 2) For the adjustable device the minimum load current is the minimum current required to mantain regulation. Normally the current in the resistor devider used to set the output voltage is selected to meet the minimum load current requirement.
(NOTE 3) The control pin current is the driver current required for the output transistor. This current will track output current whit a ratio of about 1:100
(NOTE 4) The dropout voltage for the CS5205 is caused by either minimum control voltage or minimum power voltage. The specification represent the minimum input/output voltage required to mantain 1% regulation.

SPICE MODEL
Spice model pending.
 
CROSS REFERENCE PARTS
Cherry Semiconductor CS5205-1, ON Semiconductor CS5205-1

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
mils [mm]
Bonding pads Backside metallization
Silicon 10 122.05 x 71.65 ±1
[3.1 x 1.82]
min 7x7 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

CS5205 DIE LAYOUT - MECHANICAL SPECIFICATIONSCS5205 DIE LAYOUT - MECHANICAL SPECIFICATIONS
PAD #FUNCTIONX(mm)
1OUT0.205
2OUT1.55
3OUT2.875
4VPower0.875
5VPower2.225
6VControl1.55
7Sense0.205
8Adjust (adjustable output) GND (fixed output)0.205

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

CS5205 STANDARD PRODUCTS PRICE LIST
USM PART #MINIMUM ORDER QUANTITYWaffle PacksU/P($)
USM CS5205100pc-WP$3.20
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONIX SEMICONDUCTOR technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.

INSTANT QUOTE
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DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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