Matching pair transistors: SMSLS303-01 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS same as Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 TO78 Linear Integrated Systems LS303 manufactured by Semiconix Semiconductor - Gold chip technology for known good Matching pair transistors die, Matching pair transistors flip chip, Matching pair transistors die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Matching pair transistors: SMSLS303-01 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS same as Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 TO78 Linear Integrated Systems LS303 manufactured by Semiconix Semiconductor - Gold chip technology for known good Matching pair transistors die, Matching pair transistors flip chip, Matching pair transistors die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. TO78 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303,SMSLS303-01,Dual NPN,,Matching pair transistors, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire Matching pair transistors: SMSLS303-01 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS same as Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 TO78 Linear Integrated Systems LS303 manufactured by Semiconix Semiconductor - Gold chip technology for known good Matching pair transistors die, Matching pair transistors flip chip, Matching pair transistors die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Matching pair transistors: SMSLS303-01 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS same as Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 TO78 Linear Integrated Systems LS303 manufactured by Semiconix Semiconductor - Gold chip technology for known good Matching pair transistors die, Matching pair transistors flip chip, Matching pair transistors die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. TO78 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303,SMSLS303-01,Dual NPN,,Matching pair transistors, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire /images/watermark.gif);background-position: center center;background-repeat: repeat-y;"> REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=SMSLS303-01">INVENTORY /cgi-bin/rfq.cgi?site=&rows=1&item_1=SMSLS303-01-FC&c_item_1=HIGH%20VOLTAGE%20SUPER-BETA%20MONOLITHIC%20DUA L%20NPN%20TRANSISTORS FC">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=&rows=1&item_1=SMSLS303-01-FC&c_item_1=HIGH%20VOLTAGE%20SUP ER-BETA%20MONOLITHIC%20DUAL%20NPN%20TRANSISTORS FC">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMSLS303-01 - FLIP CHIP GOLD CHIP TECHNOLOGY™ HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS FEATURES APPLICATIONS HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS - FLIP CHIP Direct Replacement for Linear Integrated Systems LS303 Series, Pin for Pin Compatible Extremely low broadband noise Improved performance of current mirror and differential amplifier circuits Drop-in replacement for standard double transistors Simplified board layout Eliminates the need for costly additional trimming Base-emitter voltage matching Current gain matching High reliability Unique new design in 0402 style case Gold metallization RoHS compliant, Lead Free Compatible with both chip and wire, flip chip and surface mount assembly. Non-linear designs, multipliers, dividers, squaring circuits Logarithmic converters, amplifiers Voltage-controlled amplifiers Low-noise, low-drift instrumentation amplifiers Differential amplifiers Voltage references Current mirrors Comparators Thermometers Chip on Board System in package SIP Hybrid Circuits SMSLS303-01 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS SMSLS303-01 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS - PRODUCT DESCRIPTION Matched pair transistors ensure accurate base-emitter voltage (VBE1 / VBE2) and current gain (hFE1 / hFE2) matching and are fully internally isolated. As a replacement for standard double transistors in current mirror and differential amplifier applications, they eliminate the need for further costly trimming. They can also be used with an additional single or double transistor to deliver operational amplifier functionality at minimal product cost. Flip Chip Super Beta Transistors Bipolar Silicon Transistors series are available in die form in four different pad compositions: -FC, -GB, -GT and -AN. These products are ideal for high reliability hybrid circuits, multi chip module applications and surface mount applications. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions. Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Parameter Symbol Value Unit Collector Current IC 5 mA Storage Temperature Range TSTG -65 to 200 °C Operating Temperature TOP -55 to 150 °C Power Dissipation PD 250 mW Electrical Characteristics* TC = 25°C unless otherwise noted Name Symbol Test Conditions Value Unit Min. Typ. Max Collector-Emitter Breakdown Voltage V(BR)CBO IC= 10mA IE= 0 10 V Collector-Base Breakdown Voltage V(BR)CEO IC= 10mA IB= 0 10 V Emitter-Base Breakdown Voltage BVEBO IE= 10mA IC= 0 6.2 V Collector-Cutoff Current ICBO IE= 0 VCB= 5V 100 pA Emitter Cut-off Current IEBO C= 0 VEB= 3V 0.2 pA DC Current Gain hfe IC= 500mA VCE= 5V 2000 DC Current Gain hfe IC= 10mA VCE= 5V 2000 DC Current Gain hfe IC= 1.0mA VCE= 5V 2000 Collector-Emitter Saturation Voltage VCE(sat) IC= 1mA,IB= 0.1 mA 0.5 V Current Gain - Bandwidth Product fT IC= 200mA VCE= 5V 100 MHz Output Capacitance Ccb IE= 0 VCB= 1V 2 pF Collector to Collector Capacitance CC1C2 VCC= 0 2 pF Collector to Collector Leakage Current IC1C2 VCC=±20V 0.5 nA Noise Figure NF IC= 10mA VCE= 3V,BW= 200Hz, RG= 10 KW,f=1KHz 3 dB Base Emitter Voltage Differential |VBE1-VBE2| IC= 10 mA VCE= 5V 0.1 1 mV Base Emitter Voltage Differential Change with Temperature Δ|(VBE1-VBE2)|/ΔT IC= 10 mA VCE= 5V,T= -55°C to +125°C 1 5 mV/°C Base Current Differential IB1-IB2| IC= 10 mA VCE= 5V 1.5 nA Base Current Differential IB1-IB2| IC= 10 mA VCE= 1V 0.5 nA DC Current Gain Differential hFE1/hFE2 IC= 10mA VCE= 5V 5 % SPICE MODEL CROSS REFERENCE PARTS: GENERAL DIE INFORMATION Substrate Thickness [mils] Size LxW[mils] Bonding pads dimensions per drawing Backside Silicon 10±2 20x40±2 Type Pad metal Thickness Assembly -FC TiW/Au 4µm±1 Wire bonding or Silver epoxy -GB TiW/Au 25µm±2.5 Thermosonic -GT Ti/Pt/AuSn 5µm±1 Reflow -AN Ni/Au 5µm±1 Solder reflow Optional backside coating and/or marking. LAYOUT / DIMENSIONS / PAD LOCATIONS Click to select process: -FC -GB -GT -AN SMSLS303-01 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS SMSLS303-01 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS wire bonding SMSLS303-01 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORSthermosonic SMSLS303-01 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORSthermal SMSLS303-01 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORSsolder reflow SMSLS303-01 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix flip chip components are designed for dry assembly processes as well as for processes that use adhesives, fluxes etc. Dry assembly process is an assembly process that does not use additional solders, fluxes or adhesives. Thermosonic wire bonding is a dry assembly process. Semiconix Flip Chip -FC series can be also used for thermosonic wire bonding. Semiconix Gold Bump -GB series are flip chips that are thermosonically attached to a circuit. Semiconix Gold Tin -GT series are flip chips with Au/Sn, 80/20 metallized pads. GT series can be attached to circuits by bringing the die in contact with a substrate which temperature is more than 280°C. Upon cooling bellow 280C, the die is firmly welded to the substrate. Flux less dry assembly is most reliable but is also most expensive because of thick gold bumps or expensive Au/Sn process. Semiconix -FC series is designed to be used for flip chip assembly with conductive silver epoxy. It is a simple and inexpensive process consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. Same procedure may be used also with -GB series in certain applications. Semiconix Gold/Nickel -AN series is the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at T>220°C, clean, etc. Semiconix Flip Chip -AN series are available in many sizes with landing pads compatible with the industry standard CSP as well as surface mount packages. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($) Flip chip SMSLS303-01-FC -WP 10000 -FF 5700 Flip chip SMSLS303-01-FC -WP 50000 -FF 28500 Gold Bump SMSLS303-01-GB -WP 10000 -FF 5700 Gold Bump SMSLS303-01-GB -WP 50000 -FF 28500 Gold-Tin SMSLS303-01-GT -WP 10000 -FF 5700 Gold-Tin SMSLS303-01-GT -WP 50000 -FF 28500 Gold/Nickel SMSLS303-01-AN -WP 10000 -FF 5700 Gold/Nickel SMSLS303-01-AN -WP 50000 -FF 28500 PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice. LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMSLS303-01-FC&idx=30">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission.

REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP

   
semiconix semiconductor - where the future is today - gold chip technology SMSLS303-01 - FLIP CHIP
GOLD CHIP TECHNOLOGY™ HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS

FEATURES APPLICATIONS HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS - FLIP CHIP
Direct Replacement for Linear Integrated Systems LS303 Series, Pin for Pin Compatible
Extremely low broadband noise
Improved performance of current mirror and differential amplifier circuits
Drop-in replacement for standard double transistors
Simplified board layout
Eliminates the need for costly additional trimming
Base-emitter voltage matching
Current gain matching
High reliability
Unique new design in 0402 style case
Gold metallization
RoHS compliant, Lead Free
Compatible with both chip and wire, flip chip and surface mount assembly.
Non-linear designs, multipliers, dividers, squaring circuits
Logarithmic converters, amplifiers
Voltage-controlled amplifiers
Low-noise, low-drift instrumentation amplifiers
Differential amplifiers
Voltage references
Current mirrors
Comparators
Thermometers
Chip on Board
System in package SIP
Hybrid Circuits
SMSLS303-01 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS
SMSLS303-01 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS

HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS - PRODUCT DESCRIPTION
Matched pair transistors ensure accurate base-emitter voltage (VBE1 / VBE2) and current gain (hFE1 / hFE2) matching and are fully internally isolated. As a replacement for standard double transistors in current mirror and differential amplifier applications, they eliminate the need for further costly trimming. They can also be used with an additional single or double transistor to deliver operational amplifier functionality at minimal product cost.
Flip Chip Super Beta Transistors Bipolar Silicon Transistors series are available in die form in four different pad compositions: -FC, -GB, -GT and -AN. These products are ideal for high reliability hybrid circuits, multi chip module applications and surface mount applications.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Parameter Symbol Value Unit
Collector Current IC 5 mA
Storage Temperature Range TSTG -65 to 200 °C
Operating Temperature TOP -55 to 150 °C
Power Dissipation PD 250 mW

Electrical Characteristics* TC = 25°C unless otherwise noted
Name Symbol Test Conditions Value Unit
Min. Typ. Max
Collector-Emitter Breakdown Voltage V(BR)CBO IC= 10mA IE= 0 10 V
Collector-Base Breakdown Voltage V(BR)CEO IC= 10mA IB= 0 10 V
Emitter-Base Breakdown Voltage BVEBO IE= 10mA IC= 0 6.2 V
Collector-Cutoff Current ICBO IE= 0 VCB= 5V 100 pA
Emitter Cut-off Current IEBO C= 0 VEB= 3V 0.2 pA
DC Current Gain hfe IC= 500mA VCE= 5V 2000
DC Current Gain hfe IC= 10mA VCE= 5V 2000
DC Current Gain hfe IC= 1.0mA VCE= 5V 2000
Collector-Emitter Saturation Voltage VCE(sat) IC= 1mA,IB= 0.1 mA 0.5 V
Current Gain - Bandwidth Product fT IC= 200mA VCE= 5V 100 MHz
Output Capacitance Ccb IE= 0 VCB= 1V 2 pF
Collector to Collector Capacitance CC1C2 VCC= 0 2 pF
Collector to Collector Leakage Current IC1C2 VCC=±20V 0.5 nA
Noise Figure NF IC= 10mA VCE= 3V,BW= 200Hz, RG= 10 KW,f=1KHz 3 dB
Base Emitter Voltage Differential |VBE1-VBE2| IC= 10 mA VCE= 5V 0.1 1 mV
Base Emitter Voltage Differential Change with Temperature Δ|(VBE1-VBE2)|/ΔT IC= 10 mA VCE= 5V,T= -55°C to +125°C 1 5 mV/°C
Base Current Differential IB1-IB2| IC= 10 mA VCE= 5V 1.5 nA
Base Current Differential IB1-IB2| IC= 10 mA VCE= 1V 0.5 nA
DC Current Gain Differential hFE1/hFE2 IC= 10mA VCE= 5V 5 %
SPICE MODEL
Spice model pending.
CROSS REFERENCE PARTS: Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Size
LxW[mils]
Bonding pads dimensions per drawing Backside
Silicon 10±2 20x40±2
TypePad metalThicknessAssembly
-FCTiW/Au4µm±1Wire bonding or Silver epoxy
-GBTiW/Au25µm±2.5Thermosonic
-GTTi/Pt/AuSn5µm±1Reflow
-ANNi/Au5µm±1Solder reflow
Optional backside coating and/or marking.

LAYOUT / DIMENSIONS / PAD LOCATIONS
Click to select process: -FC -GB -GT -AN
SMSLS303-01 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS SMSLS303-01 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS
wire bonding SMSLS303-01 Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303, Linear Integrated Systems LS303 Linear Integrated Systems LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix flip chip components are designed for dry assembly processes as well as for processes that use adhesives, fluxes etc. Dry assembly process is an assembly process that does not use additional solders, fluxes or adhesives. Thermosonic wire bonding is a dry assembly process. Semiconix Flip Chip -FC series can be also used for thermosonic wire bonding. Semiconix Gold Bump -GB series are flip chips that are thermosonically attached to a circuit. Semiconix Gold Tin -GT series are flip chips with Au/Sn, 80/20 metallized pads. GT series can be attached to circuits by bringing the die in contact with a substrate which temperature is more than 280°C. Upon cooling bellow 280C, the die is firmly welded to the substrate. Flux less dry assembly is most reliable but is also most expensive because of thick gold bumps or expensive Au/Sn process.
Semiconix -FC series is designed to be used for flip chip assembly with conductive silver epoxy. It is a simple and inexpensive process consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. Same procedure may be used also with -GB series in certain applications.
Semiconix Gold/Nickel -AN series is the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at T>220°C, clean, etc.
Semiconix Flip Chip -AN series are available in many sizes with landing pads compatible with the industry standard CSP as well as surface mount packages.

STANDARD PRODUCTS ORDERING INFORMATION

VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($)
Flip chip SMSLS303-01-FC -WP 10000 -FF 5700
Flip chip SMSLS303-01-FC -WP 50000 -FF 28500
Gold Bump SMSLS303-01-GB -WP 10000 -FF 5700
Gold Bump SMSLS303-01-GB -WP 50000 -FF 28500
Gold-Tin SMSLS303-01-GT -WP 10000 -FF 5700
Gold-Tin SMSLS303-01-GT -WP 50000 -FF 28500
Gold/Nickel SMSLS303-01-AN -WP 10000 -FF 5700
Gold/Nickel SMSLS303-01-AN -WP 50000 -FF 28500

PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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