SMX UC3842A HIGH PERFORMANCE CURRENT MODE CONTROLLERS same as Fairchild Semiconductor UC3842A, Fairchild Semiconductor UC3842A, Fairchild Semiconductor UC3842AD, Fairchild Semiconductor UC3842AN, Fairchild Semiconductor UC3842ADX, Microsemi UC3842ADM, Microsemi UC3842AD, Microsemi UC3842AM, Motorola UC3842AN, Motorola UC3842A, Motorola UC3842AD, ON Semiconductor UC3842ADR2, ON Semiconductor UC3842AN, ON Semiconductor UC3842AN, ON Semiconductor UC3842A-D, ON Semiconductor UC3842AD, ON Semiconductor UC3842ADR2, ON Semiconductor UC3842AD, ON Semiconductor UC3842AN2, ON Semiconductor UC3842AN2, ON Semiconductor UC3842A, ON Semiconductor UC3842A, SGS Thomson Microelectronics UC3842A, SGS Thomson Microelectronics UC3842AN, SGS Thomson Microelectronics UC3842AD, ST Microelectronics UC3842AD1013TR, ST Microelectronics UC3842AD1, ST Microelectronics UC3842AD, ST Microelectronics UC3842A, ST Microelectronics UC3842AN, Texas Instruments UC3842ADTR, Texas Instruments UC3842AD8, Texas Instruments UC3842A, Texas Instruments UC3842ANG4, Texas Instruments UC3842ANG4, Texas Instruments UC3842AD8, Texas Instruments UC3842AD8TR, Texas Instruments UC3842ADTR, Texas Instruments UC3842ADW, Texas Instruments UC3842ADW, Texas Instruments UC3842ADWTR, Texas Instruments UC3842ADWTR, Texas Instruments UC3842AJ, Texas Instruments UC3842AJ, Texas Instruments UC3842AD8TR, Unisonic Technologies UTCUC3842A manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Fairchild Semiconductor UC3842A, Microsemi UC3842AD, Motorola UC3842A, ON Semiconductor UC3842A, SGS Thomson Microelectronics UC3842A, ST Microelectronics UC3842A, Texas Instruments UC3842A, Unisonic Technologies UTCUC3842A SMX UC3842A HIGH PERFORMANCE CURRENT MODE CONTROLLERS same as Fairchild Semiconductor UC3842A, Fairchild Semiconductor UC3842A, Fairchild Semiconductor UC3842AD, Fairchild Semiconductor UC3842AN, Fairchild Semiconductor UC3842ADX, Microsemi UC3842ADM, Microsemi UC3842AD, Microsemi UC3842AM, Motorola UC3842AN, Motorola UC3842A, Motorola UC3842AD, ON Semiconductor UC3842ADR2, ON Semiconductor UC3842AN, ON Semiconductor UC3842AN, ON Semiconductor UC3842A-D, ON Semiconductor UC3842AD, ON Semiconductor UC3842ADR2, ON Semiconductor UC3842AD, ON Semiconductor UC3842AN2, ON Semiconductor UC3842AN2, ON Semiconductor UC3842A, ON Semiconductor UC3842A, SGS Thomson Microelectronics UC3842A, SGS Thomson Microelectronics UC3842AN, SGS Thomson Microelectronics UC3842AD, ST Microelectronics UC3842AD1013TR, ST Microelectronics UC3842AD1, ST Microelectronics UC3842AD, ST Microelectronics UC3842A, ST Microelectronics UC3842AN, Texas Instruments UC3842ADTR, Texas Instruments UC3842AD8, Texas Instruments UC3842A, Texas Instruments UC3842ANG4, Texas Instruments UC3842ANG4, Texas Instruments UC3842AD8, Texas Instruments UC3842AD8TR, Texas Instruments UC3842ADTR, Texas Instruments UC3842ADW, Texas Instruments UC3842ADW, Texas Instruments UC3842ADWTR, Texas Instruments UC3842ADWTR, Texas Instruments UC3842AJ, Texas Instruments UC3842AJ, Texas Instruments UC3842AD8TR, Unisonic Technologies UTCUC3842A manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Fairchild Semiconductor UC3842A, Microsemi UC3842AD, Motorola UC3842A, ON Semiconductor UC3842A, SGS Thomson Microelectronics UC3842A, ST Microelectronics UC3842A, Texas Instruments UC3842A, Unisonic Technologies UTCUC3842A REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=UC3842A">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXUC3842A&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX UC3842A - BARE DIE GOLD CHIP TECHNOLOGY™ HIGH PERFORMANCE CURRENT MODE CONTROLLERS FEATURES APPLICATIONS HIGH PERFORMANCE CURRENT MODE CONTROLLERS Trimmed Oscillator Discharge Current for Precise Duty Cycle Control Current Mode Operation to 500 kHz Automatic Feed Forward Compensation Latching PWM for Cycle By Cycle Current Limiting Internally Trimmed Reference with Undervoltage Lockout High Current Totem Pole Output Undervoltage Lockout with Hysteresis Low Startup and Operating CurrentDirect Interface with Motorola SENSEFET Products In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS UC3842A UC3842A HIGH PERFORMANCE CURRENT MODE CONTROLLERS SMXUC3842A HIGH PERFORMANCE CURRENT MODE CONTROLLERS - PRODUCT DESCRIPTION The SMX UC3842A series of high performance fixed frequency current mode controllers are specifically designed for off-line and dc-to-dc converter applications offering the designer a cost effective solution with minimal external components. These integrated circuits feature a trimmed oscillator for precise duty cycle control, a temperature compensated reference, high gain error amplifier, current sensing comparator, and a high current totem pole output ideally suited for driving a power MOSFET.Also included are protective features consisting of input and reference under-voltage lockouts each with hysteresis, cycle-by-cycle current limiting, programmable output deadtime, and a latch for single pulse metering. These devices are available in die form. The UC3842A has UVLO thresholds of 16 V (on) and 10 V (off), ideally suited for off-line converters. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM UC3842A Fairchild Semiconductor UC3842A HIGH PERFORMANCE CURRENT MODE CONTROLLERS UC3842A MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Total Power Supply and Zener Current Icc+Iz 30 mA Output Current, Source or Sink (Note 1) Io 1 A Output Energy (Capacitive Load per Cycle) W 5 µJ Current Sense and Voltage Feedback Inputs Vin -0.3 to +5.5 V Error Amp Output Sink Current Io 10 mA Power Dissipation Pd 1 W Operating Junction Temperature Tj 150 °C Operating Ambient Temperature Ta 0 to +70 °C Storage Temperature Range Tstg -65 to 150 °C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. UC3842A ELECTRICAL CHARACTERISTIC VCC=15V[note2], RT=10k, CT=3.3nF, TA=Tlow to Thigh [Note3] PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Reference Output Voltage Io=1mA,TJ=25°C VREF 4.95 5 5.05 V Line Regulation VCC=12V to25V Regline - 2 20 mV Load Regulation IO=1.mA to 20mA Regload - 3 25 mV Temperature Stability TS 0.2 mV/°C Total Output Variation over Line, Load, Temperature Vref 4.9 5.1 V Output Noise Voltage (f=10 Hz to 10 kHz, TJ=25°C) Vn 50 µV Long Term Stability (TA=125°C for 1000 Hours) S 5 mV Output Short Circuit Current ISC -30 -85 -180 mA Frequency TJ=25 °C TA=Tlow to Thigh fOSC 47 46 52 - 57 60 kHz Frequency Change with Voltage VCC=12V to 25V DfOSC/ΔV 0.2 1 % Frequency Change with Temperature TA=Tlow to Thigh DfOSC/ΔT 5 % Oscillator Voltage Swing (Peak-to-Peak) VOSC 1.6 V Discharge Current VOSC=2.0V TJ=25°C TA=Tlow to Thigh Idischg 7.5 7.2 8.4 - 9.3 9.5 mA Voltage Feedback Input VO=2.5V VFB 2.45 2.5 2.55 V Input Bias Current VFB=2.7V IIB -0.1 -1 mA Open Loop Voltage Gain VO=2.0V to 4.0V AVOL 65 90 dB Unity Gain Bandwidth TJ=25 °C BW 0.7 1 MHz Power Supply Rejection Ratio VCC=12V to 25V PSSR 60 70 dB Output Current sink(VO=1.1V VFB=2.7V) source(VO=5.0V VFB=2.3V) ISink ISource 2.0 -0.5 12 -1.0 mA Output Voltage Swing High state(RL=15ktoground,VFB=2.3V) Low state(RL=15k toVref,VFB=2.7V ) VOH VOL 5.0 - 6.2 0.8 - 1.1 V Current Sense Input Voltage Gain (Notes 4 & 5) AV 2.85 3 3.15 V/V Maximum Current Sense Input Threshold (Note 4) Vth 0.9 1 1.1 V Power Supply Rejection Ratio VCC=12V to 25V PSSR 70 dB Input Bias Current IIB -2 -10 mA Propagation Delay (Current Sense Input to Output) tPLH(IN/OUT) 150 300 ns Output Voltage Low state(ISink=200mA) (ISink=200mA) High state(ISink=20mA) (ISink=200mA) VOL VOH - - 13 12 0.1 1.6 13.5 13.4 0.4 0.2 - - V Output Voltage with UVLO Activated VCC=6.0 V ISink=1.0 mA VOL(UVLO) 0.1 1.1 V Output Voltage Rise Time CL=1nF TJ=25 °C tr 50 150 ns Output Voltage Fall Time CL=1nF TJ=25 °C tf 50 150 ns Startup Tresholde Vth 15 16 17 V Minimum OperatingVoltage After Turn-on VCC(min) 9 10 11 V Duty Cycle Maximum Minimum DCmax DCmin 94 - 96 - - 0 % Power Supply Current(Note 2) VCC=14V ICC 12 17 mA Power Supply Zenner Voltage ICC=25mA VCC 30 36 V (NOTE 1)Maximum Package power dissipation limits must be observed. (NOTE 2)Adjust Vcc above the Startup threshold before setting to 15 V. (NOTE 3)Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible Tlow=0°C Thigh=+70°C. (NOTE 4)This parameter is measured at the latch trip point with VFB=0°V (NOTE 5)Comparator gain is defined as: AV*(ΔV Output Compensation)/(ΔVCurrent Sense Input) SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10 93.7 x 64.8 ±1 [2.38 x 1.65] min 4x4 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. UC3842A DIE LAYOUT - MECHANICAL SPECIFICATIONS UC3842A DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mils) X(mm) Y(mils) 1 Comp 0.09 3.543 0.11 2 VFB 1.05 41.338 0.11 3 Isense 1.31 51.575 0.11 4 RT/CT 2 78.74 0.15 5 Power GND 1.7 66.929 1.28 6 GND 1.68 66.142 1.45 7 OUT 1.31 51.575 1.41 8 Power Vcc 0.99 38.976 1.41 9 Vcc 0.815 32.087 1.41 10 Vref 0.46 18.11 1.39 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. UC3842A STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USMUC3842A 100pc -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. 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